Sundew’s high-productivity turn-key processes are especially suitable for challenging semiconductor applications requiring highest quality, extremely conformal ALD films over area enhanced structures. In particular, high-K dielectrics, metal-insulator-metal (MIM) film stacks, ultra-conformal SiO2 for trench isolation and ALD-Cap for chip passivation.
Advanced capacitor structures with area enhancement approaching 50X stretch the limitations of ALD precursor delivery, especially since precursors suitable for High-K dielectrics such as hafnium and zirconium are extremely low-volatility. Sundew combines the high precursor utilization efficiency of SMFD-ALD™ with innovative chemical sources and integrated millisecond-response ALD manifold to deliver turn-key high-productivity capacitor and transistor manufacturing solutions at sub-second cycle times.
Sundew’s sub-second cycle time HfO2 and ZrO2 dielectrics, in combination with top and bottom TiN electrodes are tailored for advanced capacitor applications at the FEOL while TiN/Ta2O5/TiN stacks are implemented for the manufacturing of advanced RF and BEOL memory capacitors.
The pursuit of low EOT, low leakage current and high electron mobility transistors depends crucially on the interface between silicon and the transistor gate dielectric. With its newly introduced proprietary process that enables deposition, for the first time, of high-quality true ALD SiO2, Sundew’s engineered hafnium silicate provides a key, highest quality interface to HfO2.
In addition, our turn-key high-quality Al2O3 is the most cost effective solution for emerging Al2O3 based floating gate devices, such as flash non-volatile memory and ASIC.
Sundew has recently introduced a proprietary process that enables, for the first time, sub-second cycle time deposition of high-quality true ALD SiO2 at a wide temperature range. Trench isolation with conformal SiO2 ALD over deep and re-entrant trenches is now available on our Revolution wafer processing systems.
ALD-Cap substitutes SiN-Cap for a proven, MIL-SPEC enhanced reliability in harsh environments. Sundew’s ALD-Cap is a lower-cost substitute with improved manufacturing yield. ALD-Cap is particularly suitable for passivation of compound semiconductors, RF ICs, power ICs, analog and sensor ICs, where the reliability of SiN-Cap passivation is becoming increasingly marginal with generations advancement.
Compound semiconductor manufacturing employs ALD of high-K dielectrics and TiN conductive films for improved transistor and capacitor performance and manufacturing yields. Stacks of GaAlN/Ta2O5/TiN and TiN/Ta2O5/TiN, along with complementary, in-situ surface preparation available from Sundew are migrating into next generation compound semiconductor power, LED and RF ICs.
Advantages and Benefits
- High productivity sub-second cycle time ALD
- Conformal deposition into nanometer size features with aspect ratios in excess of 100 and area enhancement in excess of 50X
- Composite dielectric films for enhanced thermal stability and interface engineering
- Reproducible and scalable processes
- Highest quality dielectric layers with high dielectric constant and dielectric strength
- Monolayer controlled film composition and interface engineering
- Seamless incorporation of nanolaminates
- Sub-nanometer interface roughness
- High throughput <300 °C TiN true ALD process
- MIL-SPEC reliability with 200 nm of ALD-Cap passivation layer